MULTIPLE LAYER COLLECTOR STRUCTURE FOR BIPOLAR TRANSISTORS

MULTIPLE LAYER COLLECTOR STRUCTURE FOR BIPOLAR TRANSISTORS

Generally, and in one form of the invention, a multiple layer collector structure is provided which comprises a relatively thin, highly doped layer 12 and a relatively thick, low doped or non-intentionally doped layer 14. Other devices, systems and methods are also disclosed.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HILL, DARRELL G, LIU, WILLIAM UEIUNG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Generally, and in one form of the invention, a multiple layer collector structure is provided which comprises a relatively thin, highly doped layer 12 and a relatively thick, low doped or non-intentionally doped layer 14. Other devices, systems and methods are also disclosed.