Method of making ohmic contact to a III-V semiconductor device
Disclosed is a method of making a semiconductor device that comprises depositing a Ti/Pt layer onto an Au-containing intermediate layer (941) on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto an Au-contain...
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| creator | KOSZI, LOUIS ALEX KATZ, AVISHAY DAUTREMONT-SMITH, WILLIAM CROSSLEY SEGNER, BRYAN PHILLIP THOMAS, PETER MCLEAN |
| description | Disclosed is a method of making a semiconductor device that comprises depositing a Ti/Pt layer onto an Au-containing intermediate layer (941) on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto an Au-containing intermediate layer (951 ) on the n-doped region, followed by rapid thermal processing. Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425-500 DEG C for 10-100 seconds. |
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| subjects | BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Method of making ohmic contact to a III-V semiconductor device |
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