Method of making ohmic contact to a III-V semiconductor device

Method of making ohmic contact to a III-V semiconductor device

Disclosed is a method of making a semiconductor device that comprises depositing a Ti/Pt layer onto an Au-containing intermediate layer (941) on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto an Au-contain...

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Bibliographische Detailangaben
Hauptverfasser: KOSZI, LOUIS ALEX, KATZ, AVISHAY, DAUTREMONT-SMITH, WILLIAM CROSSLEY, SEGNER, BRYAN PHILLIP, THOMAS, PETER MCLEAN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed is a method of making a semiconductor device that comprises depositing a Ti/Pt layer onto an Au-containing intermediate layer (941) on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the semiconductor body, or onto an Au-containing intermediate layer (951 ) on the n-doped region, followed by rapid thermal processing. Exemplarily, the device is a semiconductor laser, the n-doped region is InP, the p-doped region is InGaAs or InGaAsP, and RTP involves heating in the range 425-500 DEG C for 10-100 seconds.