Mixed CMOS/BiCMOS device

Mixed CMOS/BiCMOS device

A gate array having an inner core area which has both CMOS and BiCMOS cells is presented. CMOS cells are advantageous for their low power dissipation and high density. On the other hand, BiCMOS cells have a performance advantage with their high current capability for driving large loads. Thus, a mix...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: LAI, STEPHEN WAI-YAN
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A gate array having an inner core area which has both CMOS and BiCMOS cells is presented. CMOS cells are advantageous for their low power dissipation and high density. On the other hand, BiCMOS cells have a performance advantage with their high current capability for driving large loads. Thus, a mix of both CMOS and BiCMOS cells can achieve the best design tradeoff for performance, density and power.