A graded channel field effect transistor

A MISFET having a graded semiconductor alloy channel layer (18) of silicon germanium in which the germanium is graded to a single peak percentage level. The single peak percentage level defines the location of the charge carriers within the layer. The transconductance of the device can be optimized...

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Bibliographische Detailangaben
Hauptverfasser:	VERDONCKT-VANDEBROEK, SOPHIE, STORK, JOHANNES MARIA CORNELIS, MEYERSON, BERNARD STEELE, CRABBE, EMMANUEL
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A MISFET having a graded semiconductor alloy channel layer (18) of silicon germanium in which the germanium is graded to a single peak percentage level. The single peak percentage level defines the location of the charge carriers within the layer. The transconductance of the device can be optimized by controlling the location of the carriers within the channel.