PROCESS FOR FABRICATING PZT CAPACITORS AS INTEGRATED CIRCUIT MEMORY ELEMENTS AND A CAPACITOR STORAGE ELEMENT

PROCESS FOR FABRICATING PZT CAPACITORS AS INTEGRATED CIRCUIT MEMORY ELEMENTS AND A CAPACITOR STORAGE ELEMENT

A method of forming a planar storage capacitor element having a noble metal or noble metal alloy top electrode (22), a layer of lead zirconate titanate (22), and a noble metal or noble metal alloy bottom electrode (16, 18).

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Bibliographische Detailangaben
Hauptverfasser: SCHUELE, PAUL J, LARSON, WILLIAM, KAMMERDINER, LEE, TRAYNOR, STEVEN D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming a planar storage capacitor element having a noble metal or noble metal alloy top electrode (22), a layer of lead zirconate titanate (22), and a noble metal or noble metal alloy bottom electrode (16, 18).