METALLISING PROCESS

A process is proposed for producing complete or partial metallic layers of an organometallic compound on a substrate by irradiation with a light source. In the process, a support (1) which is coated with the organometallic compound (2) and is transparent to UV or light is placed at a specified dista...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	ESROM, HILMAR
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	APPARATUS THEREFOR CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY PRINTED CIRCUITS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A process is proposed for producing complete or partial metallic layers of an organometallic compound on a substrate by irradiation with a light source. In the process, a support (1) which is coated with the organometallic compound (2) and is transparent to UV or light is placed at a specified distance (A) in front of the substrate (3) with the organometallic compound facing the substrate. The organometallic compound is then exposed to the action of pulsed photon beams having a defined wavelength, preferably a wavelength of 190 nm...550 nm. Alternatively, the photon beam is focused with the aid of a lens (5) and can be moved in the XYZ direction in relation to the support/substrate (1/2/3), or a mask (23, 26) is placed in front of or behind the support (1). The metallic layer is then reinforced by electroless or electrodeposited metallisation.