METHOD OF DEPOSITING INSULATING LAYER ON UNDERLAYING LAYER USING PLASMA-ASSISTED CVD PROCESS USING PULSE-MODULATED PLASMA

A method for producing a semiconductor device includes the steps of forming a patterned wiring line (13) on a first insulating layer (12), and depositing a second insulating layer (14) on the patterned wiring line and the first insulating layer by a plasma-assisted CVD process in which a pulse-modul...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	FURUMURA, YUJI, NAKAHIRA, JUNYA, DOKI, MASAHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method for producing a semiconductor device includes the steps of forming a patterned wiring line (13) on a first insulating layer (12), and depositing a second insulating layer (14) on the patterned wiring line and the first insulating layer by a plasma-assisted CVD process in which a pulse-modulated plasma is generated and a gas containing hydrogen is used.