Method of generating active semiconductor structures by means of starting structures which have a two-dimensional charge carrier layer parallel to the surface

Method of generating active semiconductor structures by means of starting structures which have a two-dimensional charge carrier layer parallel to the surface

A novel unipolar transistor device has been realised starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAS/GaAs heterostructures. A 600nm wide 1D channel is insulated laterally from 2DES regimes by 700nm wide deep mesa etched trenches. The conductivity in the quasi-one-dim...

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Hauptverfasser: HEITMANN, DETLEF, PLOOG, KLAUS, LAGE, HERBERT, VON KLITZING, KLAUS, DR, NIEDER, JOHANNES, WIECK, ANDREAS, GRAMBOW, PETER
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A novel unipolar transistor device has been realised starting from two-dimensional electron systems (2DES) in modulation-doped AlGaAS/GaAs heterostructures. A 600nm wide 1D channel is insulated laterally from 2DES regimes by 700nm wide deep mesa etched trenches. The conductivity in the quasi-one-dimensional channel can be tuned via the in-plane lateral-field effect of the adjacent 2DES-gates where the vacuum (or air) in the etched trenches serves as the dielectric. Room temperature operation is demonstrated yielding a 16 mu S transconductance corresponding to 160mS/mm 2D transconductance.