Charge-coupled device

A charge-coupled device having a semiconductor body (1) comprising a semiconductor layer (3) of a first conductivity type adjoining a surface (2), means for depleting the semiconductor layer (3) throughout its thickness whilst avoiding breakdown, a sequence of transport electrodes (6, 7, 8) on the surface (2) above the semiconductor layer (3), which are separated by a blocking layer (9) from this layer and are connected to the clock voltage sources (10) to form in the semiconductor layer (3) of the surface (2) mutually separated potential wells for storing and transporting information-carrying charge packets. The device further comprises an input stage (I) having a supply zone (11) for supplying said majority charge carriers and an input electrode (13), which is located between the supply zone (11) and the transport electrodes (6, 7, 8) and is separated by an isolating layer (9) from the semiconductor surface (2), an input signal source (15) and means for forming under the input electrode (13) a potential well whose minimum is located closer to the surface (2) than to the transport electrodes (6, 7, 8). According to the invention, a dopant of the second opposite conductivity type is introduced between the supply zone (11) and the transport electrodes (6, 7, 8) in such a manner that the net doping of the first conductivity type in the part (I) of the semiconductor layer (3) between the supply zone (11) and the transport electrodes (6, 7, 8) is lower than in the remaining part of the layer. Preferably, the width of the electrodes of the input stage (I) is chosen so that the transport capacity of these electrodes is practically equal to that of the transport electrodes (6, 7, 8).