GEOMETRIES AND CONFIGURATIONS FOR MAGNETRON SPUTTERING APPARATUS

GEOMETRIES AND CONFIGURATIONS FOR MAGNETRON SPUTTERING APPARATUS

The disclosures relates to a thin film coating system (10) incorporates separate, separately-controlled deposition and reaction zones for depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or tr...

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Bibliographische Detailangaben
Hauptverfasser: SOBERANIS, DAVID L, DICKEY, ERIK R, ALLEN, THOMAS H, TEMPLE, MICHAEL D, SEESER, JAMES W, WENTWORTH, PATRICK R, ILLSLEY, ROLF F, SEDDON, RICHARD I, LEFEBVRE, PAUL M, HICHWA, BRYANT P, SCOBEY, MICHAEL A, KLINGER, ROBERT F, VAN HORN, CRAIG C
Format: Patent
Sprache:eng
Schlagworte:
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:The disclosures relates to a thin film coating system (10) incorporates separate, separately-controlled deposition and reaction zones for depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separate, sequentially or simultaneously operated deposition and reaction zones and is characterised by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.