HIGH TEMPERATURE LIFT-OFF PROCESS
Disclosed is a process for forming a pattern of metallization (3) on a processed semiconductor substrate (1), under high temperature conditions, employing a polyimide precursor material (2) as a lift-off layer. Advantageously, the material is photosensitive, and, after exposure and development, the...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | Disclosed is a process for forming a pattern of metallization (3) on a processed semiconductor substrate (1), under high temperature conditions, employing a polyimide precursor material (2) as a lift-off layer. Advantageously, the material is photosensitive, and, after exposure and development, the portions of the layer remaining on the substrate can be completely and readily removed with conventional solvents. |
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