HIGH TEMPERATURE LIFT-OFF PROCESS

Disclosed is a process for forming a pattern of metallization (3) on a processed semiconductor substrate (1), under high temperature conditions, employing a polyimide precursor material (2) as a lift-off layer. Advantageously, the material is photosensitive, and, after exposure and development, the...

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Bibliographische Detailangaben
1. Verfasser: PREVITI-KELLY, ROSEMARY ANN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Disclosed is a process for forming a pattern of metallization (3) on a processed semiconductor substrate (1), under high temperature conditions, employing a polyimide precursor material (2) as a lift-off layer. Advantageously, the material is photosensitive, and, after exposure and development, the portions of the layer remaining on the substrate can be completely and readily removed with conventional solvents.