NONVOLATILE SEMICONDUCTOR MEMORY AND METHOD OF PRODUCING THE SAME

A non-volatile semiconductor memory is disclosed comprising a plurality of basic blocks each having a plurality of non-volatile memory cells connected in series. For one of said memory cells a floating gate (16) is displaced in the direction of extent of a control gate (17) to partially cover from substantially the center of a channel region to one of the boundaries of the channel region in the direction of extent of said control gate (17), and for another of said memory cells said floating gate (16) is displaced in the direction of extent of said control gate (17) to partially cover from substantially the center of said channel region to the other of the boundaries of the channel region in the direction of extent of said control gate (17).