Method of making a semiconductor device

The inventive method of producing a device having non-alloyed ohmic contacts (88,89) of common composition to both an n-doped (81) and a p-doped (86) region of a semiconductor body comprises deposition of a Ti/Pt layer on the p-doped as well as the n-doped region, followed by rapid thermal processing (RTP). Exemplarily, the device is a semiconductor layer, the n-doped region (81) is InP, the p-doped region (86) is InGaAs or InGaAsP, and RTP involves heating in the range 425-475 DEG C for 10-100 seconds. The method comprises fewer processing steps than typical prior art methods, reduces the danger of fabrication error and of wafer breakage and, significantly, results in contact that can be relatively thermally stable and can have very low specific contact resistance (exemplarily as low as 10 OMEGA .cm ).