DIELECTRIC STRUCTURES WITH EMBEDDED MATERIAL RESISTANT TO ETCHING AND METHOD OF FABRICATION THEREOF

Structures containing a dielectric material (2) having a polymeric reactive ion etch (RIE) barrier (14) embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier (14) is a copolymer having an aromatic component having high thermal stabili...

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Hauptverfasser: MCGOUEY, RICHARD P, NUNES, SHARON, L, HATZAKIS, MICHAEL, SHAW, JANE M, PARASZCZAK, JURIJ R, BABICH, EDWARD D
Format: Patent
Sprache:eng
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Zusammenfassung:Structures containing a dielectric material (2) having a polymeric reactive ion etch (RIE) barrier (14) embedded therein. The preferred dielectric materials are polymers, preferably polyimide materials. The RIE etch barrier (14) is a copolymer having an aromatic component having high thermal stability and having a cross-linking component selected from metallocyclobutane, metallobutene and vinyl groups. The etch barrier (14) is deposited as a solvent free liquid which can fill gaps (30) between the dielectric material and electrical conductors embedded therein. The liquid polymer is cured to a solid insoluble state. The structures with electrical conductors embedded therein are useful for electronic applications.