A METHOD FOR FORMING A HETEROEPITAXIAL STRUCTURE, AND A DEVICE MANUFACTURED THEREBY

Described is a method for forming epitaxial films comprising successive layers of at least ternary (40) and at least quaternary (30, 50) III-V material grown by metalorganic vapor-phase epitaxy. Between the steps of growing successive layers, the growth chamber is first flushed, advantageously in su...

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Bibliographische Detailangaben
Hauptverfasser:	LOGAN, RALPH ANDRE, TEMKIN, HENRYK, TANBUN-EK, TAWEE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Described is a method for forming epitaxial films comprising successive layers of at least ternary (40) and at least quaternary (30, 50) III-V material grown by metalorganic vapor-phase epitaxy. Between the steps of growing successive layers, the growth chamber is first flushed, advantageously in successive steps using a pair of gaseous Group V hydrides, a few monolayers of binary III-V material (35, 45) are then deposited, and then the growth chamber is again flushed. As a result, interfaces are sharper and interfacial defects are reduced. Also described are quantum well lasers made according to the inventive method.