Method of fabricating a semiconductor device

A method of fabricating a semiconductor device comprises steps of accommodating a substrate (4) on which the semiconductor device is to be fabricated in a container (1) of an electrically insulating material, forming a film of a volatile organic solvent such that the film covers substantially an ent...

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Bibliographische Detailangaben
Hauptverfasser: KOBAYASHI, MASANORI, NAKASHIMA, KAZUSHI, UNO, MASAAKI
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:A method of fabricating a semiconductor device comprises steps of accommodating a substrate (4) on which the semiconductor device is to be fabricated in a container (1) of an electrically insulating material, forming a film of a volatile organic solvent such that the film covers substantially an entire surface of the container and the substrate accommodated therein, said step of forming the film being performed while maintaining a connection between the film of the volatile organic solvent covering the surface of the container and the ground, so that electric charges are eliminated from the substrate and the container by flowing to the ground, and removing the film of the volatile organic solvent by evaporating the solvent.