Capped anneal
Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs on silicon is accomplished by first growing GaAs (104) on silicon (102), then growing a lattice matched cap of AlxGa1-xAs (106), next annealing out defects with the AlxGa1-xAs cap (106) limiting desorption of gallium, lastly gr...
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| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs on silicon is accomplished by first growing GaAs (104) on silicon (102), then growing a lattice matched cap of AlxGa1-xAs (106), next annealing out defects with the AlxGa1-xAs cap (106) limiting desorption of gallium, lastly growing further GaAs (110) directly on the cap. The lattice matched cap is also used as an implant anneal cap. |
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