Thin-film transistor
A thin-film transistor comprising a substrate (1), a gate electrode (2) formed on said substrate (1), gate insulation film (3, 4, 5) formed on said gate electrode (2), semiconductor film (6) formed on said gate insulation film (3, 4, 5) and source and a drain electrode (91, 92), both formed on said...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A thin-film transistor comprising a substrate (1), a gate electrode (2) formed on said substrate (1), gate insulation film (3, 4, 5) formed on said gate electrode (2), semiconductor film (6) formed on said gate insulation film (3, 4, 5) and source and a drain electrode (91, 92), both formed on said semicnductor film (6). This thin-film transistor is characterized in that said gate electrode (2) is made of Mo-Ta alloy containing 60 to 85 atomic % of Ta, and said gate insulation film is made of a laminated layer including silicon nitride film (5) and oxide film (3) formed by oxidizing the surface of said gate electrode (2). |
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