THIN FILM TRANSISTOR WITH AN AMORPHOUS CARBON LIGHT PROTECTION AND METHOD TO MAKE THIS LIGHT PROTECTION

Thin-film transistors such as those used for actively addressing liquid-crystal devices in large display screens have to be protected against incident light. Hitherto metal films which were electrically separated from the semiconductor material by an insulating layer have been used as light protecti...

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Bibliographische Detailangaben
1. Verfasser:	MORSCH, GILBERT
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF CONDUCTORS DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INSULATORS METALLURGY NON-LINEAR OPTICS NON-METALLIC ELEMENTS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	Thin-film transistors such as those used for actively addressing liquid-crystal devices in large display screens have to be protected against incident light. Hitherto metal films which were electrically separated from the semiconductor material by an insulating layer have been used as light protection. The thin-film transistor described here is protected against incident light by means of a film of amorphous carbon. Amorphous carbon is electrically nonconducting and has an absorption of 99.96%. The carbon film is applied by means of the CVD process, methane being used as carbon source.