LIGHT-SENSITIVE COMPOSITIONS WITH PHENOL RESINS AND QUINONE DIARIDES

Photosensitive compositions containing phenolic resins and diazoquinone derivatives capable of being employed as photoresists in the formation of high-resolution patterns in the manufacture of integrated circuits. These compositions exhibit a better contrast and a better selectivity by virtue of the addition of small quantities of a condensed polycyclic aromatic sulphonic or carboxylic acid in the form of the free acid and/or of an ammonium salt and/or of an acid halide, the cation of the ammonium salt having the formula in which R1, R2, R3 and R4 = hydrogen, C1-C4 alkyl or C1-C4 hydroxyalkyl. The process of formation of negative patterns comprises the following stages: (a) covering a substrate with the photosensitive composition, (b) exposure according to the image to an ultraviolet radiation, (c) treatment of the exposed composition with a silicon compound in such a way that the silicon compound is selectively absorbed into the irradiated parts and (d) development by a dry route in order to remove selectively the unirradiated parts.