Process for removing contaminant

Contaminant is removed from the interior of the holes in the vicinity of preselected locations by etching in a gaseous plasma wherein the sheath voltage is controlled in order to direct ions of the plasma to contact the interior of the holes in the vicinity of the preselected locations.

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Bibliographische Detailangaben
1. Verfasser: MLYNKO, WALTER E
Format: Patent
Sprache:eng ; fre ; ger
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Beschreibung
Zusammenfassung:Contaminant is removed from the interior of the holes in the vicinity of preselected locations by etching in a gaseous plasma wherein the sheath voltage is controlled in order to direct ions of the plasma to contact the interior of the holes in the vicinity of the preselected locations.