Extraction electrode to lower the turn-off time of a semiconductor device

Extraction electrode to lower the turn-off time of a semiconductor device

An extraction electrode for shortening the turn-off time of a semiconductor device having a diffusion region (4) of the extraction electrode and having a metallic short circuit (6) between the diffusion region (4) of the extraction electrode and a region (2) adjacent to the diffusion region (4) of t...

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Bibliographische Detailangaben
Hauptverfasser: DATHE, JOACHIM, DECKERS, MARGARETE
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An extraction electrode for shortening the turn-off time of a semiconductor device having a diffusion region (4) of the extraction electrode and having a metallic short circuit (6) between the diffusion region (4) of the extraction electrode and a region (2) adjacent to the diffusion region (4) of the extraction electrode is intended to have as high efficiency as possible with very low space requirement. The diffusion region (4) of the extraction electrode is situated inside the region (2) adjacent to the diffusion region (4) of the extraction electrode. At least a portion of the junction between the diffusion region (4) of the extraction electrode and the region (2) adjacent to the diffusion region (4) of the extraction electrode is free of metallisation.