Processing apparatus and method

A process for deposition of silicon oxide films which utilizes the combination of remote (1326) and in situ plasma (1314, 1312) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, a source of oxygen, for example, O2, N2O, CO2 and NO2, and monosilane, for exa...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: FREEMAN, DEAN W, DAVIS, CECIL J, LOEWESTEIN, LEE M
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator FREEMAN, DEAN W
DAVIS, CECIL J
LOEWESTEIN, LEE M
description A process for deposition of silicon oxide films which utilizes the combination of remote (1326) and in situ plasma (1314, 1312) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, a source of oxygen, for example, O2, N2O, CO2 and NO2, and monosilane, for example, SiH2Cl2 or SiH4.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_EP0299249A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>EP0299249A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_EP0299249A13</originalsourceid><addsrcrecordid>eNrjZJAPKMpPTi0uzsxLV0gsKEgsSiwpLVZIzEtRyE0tychP4WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BBkaWlkYmlo6GxkQoAQD0dCS2</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Processing apparatus and method</title><source>esp@cenet</source><creator>FREEMAN, DEAN W ; DAVIS, CECIL J ; LOEWESTEIN, LEE M</creator><creatorcontrib>FREEMAN, DEAN W ; DAVIS, CECIL J ; LOEWESTEIN, LEE M</creatorcontrib><description>A process for deposition of silicon oxide films which utilizes the combination of remote (1326) and in situ plasma (1314, 1312) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, a source of oxygen, for example, O2, N2O, CO2 and NO2, and monosilane, for example, SiH2Cl2 or SiH4.</description><edition>4</edition><language>eng ; fre ; ger</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>1989</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19890118&amp;DB=EPODOC&amp;CC=EP&amp;NR=0299249A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=19890118&amp;DB=EPODOC&amp;CC=EP&amp;NR=0299249A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FREEMAN, DEAN W</creatorcontrib><creatorcontrib>DAVIS, CECIL J</creatorcontrib><creatorcontrib>LOEWESTEIN, LEE M</creatorcontrib><title>Processing apparatus and method</title><description>A process for deposition of silicon oxide films which utilizes the combination of remote (1326) and in situ plasma (1314, 1312) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, a source of oxygen, for example, O2, N2O, CO2 and NO2, and monosilane, for example, SiH2Cl2 or SiH4.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>1989</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAPKMpPTi0uzsxLV0gsKEgsSiwpLVZIzEtRyE0tychP4WFgTUvMKU7lhdLcDApuriHOHrqpBfnxqcUFicmpeakl8a4BBkaWlkYmlo6GxkQoAQD0dCS2</recordid><startdate>19890118</startdate><enddate>19890118</enddate><creator>FREEMAN, DEAN W</creator><creator>DAVIS, CECIL J</creator><creator>LOEWESTEIN, LEE M</creator><scope>EVB</scope></search><sort><creationdate>19890118</creationdate><title>Processing apparatus and method</title><author>FREEMAN, DEAN W ; DAVIS, CECIL J ; LOEWESTEIN, LEE M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_EP0299249A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; ger</language><creationdate>1989</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>FREEMAN, DEAN W</creatorcontrib><creatorcontrib>DAVIS, CECIL J</creatorcontrib><creatorcontrib>LOEWESTEIN, LEE M</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FREEMAN, DEAN W</au><au>DAVIS, CECIL J</au><au>LOEWESTEIN, LEE M</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Processing apparatus and method</title><date>1989-01-18</date><risdate>1989</risdate><abstract>A process for deposition of silicon oxide films which utilizes the combination of remote (1326) and in situ plasma (1314, 1312) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, a source of oxygen, for example, O2, N2O, CO2 and NO2, and monosilane, for example, SiH2Cl2 or SiH4.</abstract><edition>4</edition><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng ; fre ; ger
recordid cdi_epo_espacenet_EP0299249A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title Processing apparatus and method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T08%3A13%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FREEMAN,%20DEAN%20W&rft.date=1989-01-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EEP0299249A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true