Processing apparatus and method

A process for deposition of silicon oxide films which utilizes the combination of remote (1326) and in situ plasma (1314, 1312) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, a source of oxygen, for example, O2, N2O, CO2 and NO2, and monosilane, for exa...

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Bibliographische Detailangaben
Hauptverfasser:	FREEMAN, DEAN W, DAVIS, CECIL J, LOEWESTEIN, LEE M
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A process for deposition of silicon oxide films which utilizes the combination of remote (1326) and in situ plasma (1314, 1312) in a low pressure process module (1300) and the plasma is generated form a mixture of Helium, a source of oxygen, for example, O2, N2O, CO2 and NO2, and monosilane, for example, SiH2Cl2 or SiH4.