PROCESS FOR SILICONISING POROUS SHAPED BODIES OF SILICON CARBIDE/CARBON

Porous shaped articles of silicon carbide or silicon carbide/carbon, which have at least two parallel outer walls, are silicised by moulding a mixture of silicon carbide powder, carbon and organic binder to give a green compact, carbonising the binder of the green compact in a non-oxidising atmosphe...

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Bibliographische Detailangaben
Hauptverfasser:	POLLAK, WOLFGANG, SCHELTER, HEINRICH
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	ARTIFICIAL STONE BLASTING CEMENTS CERAMICS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OFGENERAL APPLICATION DIFFUSION TREATMENT OF METALLIC MATERIAL HEAT EXCHANGE IN GENERAL HEATING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LIGHTING LIME, MAGNESIA MECHANICAL ENGINEERING METALLURGY REFRACTORIES SLAG SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TREATMENT OF NATURAL STONE WEAPONS
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Beschreibung
Zusammenfassung:	Porous shaped articles of silicon carbide or silicon carbide/carbon, which have at least two parallel outer walls, are silicised by moulding a mixture of silicon carbide powder, carbon and organic binder to give a green compact, carbonising the binder of the green compact in a non-oxidising atmosphere at about 1000 DEG C and silicising the resulting blank by the action of elementary silicon at temperatures of at least 1400 DEG C, the blank (5) resting during the silicising with a lower parallel outer surface on at least one SiSiC container (3) and at least one SiSiC container (3a) being located on the upper parallel outer surface, the SiSiC containers (3, 3a) being at least partially filled with elemental silicon (2), and the assembly of SiSiC containers and SiSiC articles obtained being cooled in vacuo after the silicisation has been completed. In this process, an SiSiC plate (4) is located between the lower parallel outer surface of the blank (5) and the SiSiC containers (3) on which the former rests.