Method for preparing thin film of superconductor

A method for preparing a thin film of superconductor on a substrate by sputtering. A target prepared by an oxide containing Ba, Y and Cu in atomic ratios Cu/Y of 2.5 to 3.5 and Ba/Y of 1.8 to 2.2 is employed to form a superconducting thin film on a substrate at a temperature of 600 to 800 DEG C in a...

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Bibliographische Detailangaben
Hauptverfasser:	HARADA, KEIZO ITAMI WORKS SUMITOMO ELEC. IND, JODAI, TETSUJI ITAMI WORKS SUMITOMO ELEC. IND, FUJIMORI, NAOJI ITAMI WORKS SUMITOMO ELEC. IND, YAZU, SHUJI ITAMI WORKS SUMITOMO ELEC. IND
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CONDUCTORS CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY INSULATORS METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method for preparing a thin film of superconductor on a substrate by sputtering. A target prepared by an oxide containing Ba, Y and Cu in atomic ratios Cu/Y of 2.5 to 3.5 and Ba/Y of 1.8 to 2.2 is employed to form a superconducting thin film on a substrate at a temperature of 600 to 800 DEG C in an atmosphere having total gas pressure of 1 x 10 to 5 x 10 Torr. and containing Ar and O2 with an O2 content of 5 to 80 vol.%. The thin film thus formed is subjected to heat treatment at a temperature of 600 to 930 DEG C for 1 to 30 hours. The thin film after the heat treatment is cooled at a rate not more than 4 DEG C/min. The film forming surface of the substrate is prepared by the (100) surface or the (110) surface of a singlecrystal substrate which is lattice-matched with the (100) surface or the (110) surface of a crystal substrate of Y1Ba2Cu3O7-n, where n represents number satisfying 0