RADIATION CROSS-LINKABLE POLYMER SYSTEM FOR APPLICATION AS PHOTORESIST AND DIELECTRIC FOR MICRO WIRING

To shorten the exposure time, a negative photoresist is provided which is suitable for leaving on a microelectronic device as dielectric because of its thermal and mechanical properties and which consists of 90 to 100% of a polyether polyacrylate having acrylic acid terminal groups and of up to 10%...

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Bibliographische Detailangaben
1. Verfasser:	BUDDE, KLAUS
Format:	Patent
Sprache:	eng ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP
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Beschreibung
Zusammenfassung:	To shorten the exposure time, a negative photoresist is provided which is suitable for leaving on a microelectronic device as dielectric because of its thermal and mechanical properties and which consists of 90 to 100% of a polyether polyacrylate having acrylic acid terminal groups and of up to 10% of a chemically related polyfunctional compound acting as crosslinking promoter. The polymer system has high UV sensitivity, can be cured without additional heat treatment and, because of its electrical and mechanical properties, is particularly suitable for producing microwirings.