BROMINE AND IODINE ETCH PROCESS FOR SILICON AND SILICIDES

BROMINE AND IODINE ETCH PROCESS FOR SILICON AND SILICIDES

A process for etching single crystal silicon, polysilicon, silicide and polycide using iodide gas chemistry, is disclosed. The iodide gas chemistry etches narrow deep trenches (10) with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomen...

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Bibliographische Detailangaben
Hauptverfasser: MAYDAN, DAN, WANG, DAVID NIN-KOU, WONG, JERRY YUEN KUI, CHANG, MEI, MAK, ALFRED W. S
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A process for etching single crystal silicon, polysilicon, silicide and polycide using iodide gas chemistry, is disclosed. The iodide gas chemistry etches narrow deep trenches (10) with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.