PROCESS FOR MAKING METAL-SEMICONDUCTOR OHMIC CONTACTS

PROCESS FOR MAKING METAL-SEMICONDUCTOR OHMIC CONTACTS

An improved process for making metal-semiconductor ohmic contacts comprises a de-hydrogenation heat treatment of the wafer for releasing the hydrogen "implanted" in the crystal lattice during the preceding step of "opening of the contacts" by R.I.E. plasma etch. A heat treatment...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: GUALANDRIS, FABIO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An improved process for making metal-semiconductor ohmic contacts comprises a de-hydrogenation heat treatment of the wafer for releasing the hydrogen "implanted" in the crystal lattice during the preceding step of "opening of the contacts" by R.I.E. plasma etch. A heat treatment at about 600 DEG C in nitrogen for few hours permits to eliminate a great part of the hydrogen from the silicon before proceeding to sputtering of a metallurgical barrier and/or of a metallization layer.