LOW DOSE EMITTER VERTICAL FUSE

A vertical fuse structure is disclosed which includes a lightly-doped emitter 30 to provide improved fusing characteristics. The structure includes a buried collector 12, an overlying base 18, and an emitter 30 above the base 18. In the preferred embodiment, the emitter 30 extends approximately 0.2 microns from the upper surface and has an impurity concentration of about 8x10 atoms of arsenic per cubic centimeter at the surface. The base region 18 is lightly doped and extends for approximately 0.46 microns below the emitter 30 to the collector 12. On the upper surface of emitter 30, a metal contact 35 is disposed. The fuse is blown by heating the metal 35 emitter 30 interface to its eutectic melting point using a current or voltage pulse to cause the aluminum to short through the emitter 30 to the base 18.