Fabrication process for EPROM cells with oxide-nitride-oxide dielectric

Fabrication process for EPROM cells with oxide-nitride-oxide dielectric

The process calls for covering of the dielectric (6) with a thin additional layer of polysilicon (10) which has the function of protecting the dielectric from any defects which would otherwise be introduced from the subsequent masking.

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Bibliographische Detailangaben
Hauptverfasser: CRISENZA, GIUSEPPE, GHIDINI, GABRIELLA
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The process calls for covering of the dielectric (6) with a thin additional layer of polysilicon (10) which has the function of protecting the dielectric from any defects which would otherwise be introduced from the subsequent masking.