ELECTRODE INTERCONNECTION MATERIAL, SEMICONDUCTOR DEVICE USING THIS MATERIAL AND DRIVING CIRCUIT SUBSTRATE FOR DISPLAY DEVICE

ELECTRODE INTERCONNECTION MATERIAL, SEMICONDUCTOR DEVICE USING THIS MATERIAL AND DRIVING CIRCUIT SUBSTRATE FOR DISPLAY DEVICE

There is provided a semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent. Using this Mo-Ta alloy, there is provided an electrode interconnection material comprising a multi-layered structure having an underlying metal film having a cry...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: IKEDA, MITSUSHI, DOHJO, MASAYUKI, OANA, YASUHISA
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:There is provided a semiconductor device using a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent. Using this Mo-Ta alloy, there is provided an electrode interconnection material comprising a multi-layered structure having an underlying metal film having a crystalline form of a body-centered cubic system and overlying a molybdenum-­tantalum alloy film having a tantalum composition ratio of above 84 atomic percent. Further using this Mo-Ta alloy, there is provided a display device driving cir­cuit substrate comprising an insulating substrate, a plurality of address lines (11) and data lines (13) intersecting each other on the substrate, the address line (11) being formed of a molybdenum-tantalum alloy having a tantalum composition ratio of 30 to 84 atomic percent, a plurality of thin-film transistors (15) each formed at an intersection of said address and data lines (11, 13) and having its gate electrode (17) connected to an address line (11) and its source electrode (18) con­nected to data line (13), and a plurality of display electrodes (21) connected to the drain electrode (19) of the thin-film transistor (15).