SEMICONDUCTOR DEVICE

PCT No. PCT/JP86/00443 Sec. 371 Date May 4, 1987 Sec. 102(e) Date May 4, 1987 PCT Filed Aug. 29, 1986 PCT Pub. No. WO87/01522 PCT Pub. Date Mar. 12, 1987.A novel method which enables a quaternary III-V group crystal to be readily formed on a III-V group crystal so that the former crystal lattice-mat...

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Hauptverfasser:	TSUJI, SHINJI HITACHI KOYASUDAI-APART, 2-32-A104, OHISHI, AKIO HITACHI DAI 4 KYOSHIN-RYO, 4-14-6, WATANABE, AKIYOSHI HITACHI SHOBU-RYO, 5-18-3, MATSUMURA, HIROYOSHI 264-61, KUBO, HIDAKA-MACHI, KURODA, TAKAO HITACHI KOGANEI-RYO, 5-20-22
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS DEVICES USING STIMULATED EMISSION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Zusammenfassung:	PCT No. PCT/JP86/00443 Sec. 371 Date May 4, 1987 Sec. 102(e) Date May 4, 1987 PCT Filed Aug. 29, 1986 PCT Pub. No. WO87/01522 PCT Pub. Date Mar. 12, 1987.A novel method which enables a quaternary III-V group crystal to be readily formed on a III-V group crystal so that the former crystal lattice-matches with the latter crystal. More specifically, it is easy to produce a superlattice structure on a III-V group crystal substrate, the superlattice structure consisting of a first III-V group (hereinafter referred to as "III1-V1") binary crystal layer which lattice-matches with the substrate, and a III-V group (III1-III2-V2) ternary crystal layer which similarly lattice-matches with the substrate. It is possible to obtain an even more stable superlattice layer by selecting the ratio between the film thickness of the (III1-V1) crystal and the film thickness of the (III1-III2-V2) crystal so that, when the superlattice structure is mixed-crystallized spontaneously or by means of impurity doping, the mixed-crystallized composition lattice-matches with the previous crystal.