ETCHING METHOD

Materials whose elemental constituents are selected from groups III and V of the Periodic Table are photochemically etched in a reducing environment. Etching is carried out by il- lurnineting a halogenated hydrocarbon gas, eg methyl iodide, with ultra-violet light in the vicinity of the material. Th...

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Bibliographische Detailangaben
Hauptverfasser:	AYLETT, MARTIN RICHARD, HAIGH, JOHN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Materials whose elemental constituents are selected from groups III and V of the Periodic Table are photochemically etched in a reducing environment. Etching is carried out by il- lurnineting a halogenated hydrocarbon gas, eg methyl iodide, with ultra-violet light in the vicinity of the material. The reducing environment is provided by the presence of sufficient hydrogen to suppress the effect of any oxygen leaking into the system.Methods according to the invention may be used in particular in the production of opto-electronic devices.