Bidirectional power fet with integral avalanche protection

Lateral FET structure is disclosed for bidirectional power switching, including AC application. Integral avalanche protection is provided by a pair of isolation regions forming protective barrier junctions with a common layer, which junctions are in parallel with the reverse blocking junctions of th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	BENJAMIN, JAMES ANTHONY, LADE, ROBERT WALTER, SCHUTTEN, HERMAN PETER
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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