Planar field-shaped bidirectional power fet
Lateral planar FET structure (2) is disclosed for bidirection power switching, including AC application. Voltage blocking capability is enhanced in the lateral current flow device (2) by field shaping in the drift region (22). In the OFF state, the field shaping region (24) straightens field lines a...
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Format: | Patent |
Sprache: | eng ; fre ; ger |
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Zusammenfassung: | Lateral planar FET structure (2) is disclosed for bidirection power switching, including AC application. Voltage blocking capability is enhanced in the lateral current flow device (2) by field shaping in the drift region (22). In the OFF state, the field shaping region (24) straightens field lines and prevents gradient induced depletion and unwanted inversion of conductivity type along a lateral drift region portion (54) extending beneath a top major surface (28) of the substrate between channel-containing regions (6) and (8). |
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