Bidirectional power fet with bipolar on-state

Bidirectional power fet with bipolar on-state

A gating technique is disclosed for split gate bidirectional power FET structure (2), including AC application. First and second channels (14, 16) are initially gated ON to provide fast field effect turn-on. One of the channels such as (14) is then gated OFF such that current is instead injected acr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BENJAMIN, JAMES ANTHONY, LADE, ROBERT WALTER, SCHUTTEN, HERMAN PETER
Format: Patent
Sprache:eng ; fre ; ger
Schlagworte:
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PULSE TECHNIQUE
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A gating technique is disclosed for split gate bidirectional power FET structure (2), including AC application. First and second channels (14, 16) are initially gated ON to provide fast field effect turn-on. One of the channels such as (14) is then gated OFF such that current is instead injected across the junction (18) between the drift region (4) and the respective channel-containing region (6) to afford bipolar conduction, which is desirable because of its lower ON state resistance. The noted channel such as (14) is then gated back ON to again afford field effect conduction between source regions (10, 12) and enable fast turn-off.