Dry development process for metal lift-off profile

A process for the development of photoresist which uses no wet developing step is disclosed. An exposed photoresist layer is initially treated with an organosilicon compound such that silicon atoms bound to the exposed photoresist resulting in different etch resistance in the exposed and unexposed a...

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Bibliographische Detailangaben
Hauptverfasser:	STANASOLOVICH, DAVID, FREDERICKS, EDWARD CARMINE, KELLY, KATHLEEN ANN
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A process for the development of photoresist which uses no wet developing step is disclosed. An exposed photoresist layer is initially treated with an organosilicon compound such that silicon atoms bound to the exposed photoresist resulting in different etch resistance in the exposed and unexposed areas. Following such treatment, the photoresist layer is selectively etched to define a mask image in the photoresist layer. Conventional processing steps can be used in conjunction with this novel process to fabricate metallic conductor structures using additive or subtractive processes.