SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device, in which mamy memory cells (1) formed by transistors (1a, 1b) having a Schottky barrier transistor as a load are arranged along word lines (2a) and the memory cells are driven from one ends of the word lines by word drivers (12). Wherein dummy cells are formed between...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A semiconductor memory device, in which mamy memory cells (1) formed by transistors (1a, 1b) having a Schottky barrier transistor as a load are arranged along word lines (2a) and the memory cells are driven from one ends of the word lines by word drivers (12). Wherein dummy cells are formed between the word drivers and the memory cells adjacent to the word drivers, so that a forward voltage of the memory cells adjacent to the word drivers is now affected by polycrystalline silicon (14) in the word drivers. |
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