Process for transition metal nitrides thin film deposition

Chemical vapour deposition process for depositing a transition metal nitride coating on a substrate. The coating has utility as a conductor in a microelectronic device. The transition metal source material for the process is a transition metal azide or aliphatic amine, optionally halogenated, which...

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Bibliographische Detailangaben
1. Verfasser:	MELAS, ANDREAS A
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS THEREOF DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Chemical vapour deposition process for depositing a transition metal nitride coating on a substrate. The coating has utility as a conductor in a microelectronic device. The transition metal source material for the process is a transition metal azide or aliphatic amine, optionally halogenated, which is a liquid at bubbler temperature. The compound is transported to a deposition chamber containing a substrate; in one embodiment transport is effected by a carrier gas comprising a mixture of hydrogen with hydrazine vapour or nitrogen. The deposition chamber containing the substrate is maintained under pyrolytic conditions to decompose the transition metal compound source material and to form a transition metal nitride on the substrate.