Multi-channel power JFET
A power JFET (2) has a stack (4) of alternating conductivity type layers (5-9) forming a plurality of channels (6, 8). The JFET has an ON state conducting bidirectional current horizontally through the channels. The channels are stacked vertically, and the JFET has an OFF state blocking current flow...
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| Format: | Patent |
| Sprache: | eng ; fre ; ger |
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| Zusammenfassung: | A power JFET (2) has a stack (4) of alternating conductivity type layers (5-9) forming a plurality of channels (6, 8). The JFET has an ON state conducting bidirectional current horizontally through the channels. The channels are stacked vertically, and the JFET has an OFF state blocking current flow through the channels due to vertical depletion pinch-off. Various main (T1, T2) and gate (G) terminal and drift region (14) structures are disclosed. |
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