Foam semiconductor dopant carriers

New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapour phase transport of an n- or p-type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tallurium, tin and cadmium to the semicond...

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Bibliographische Detailangaben
Hauptverfasser:	KASPRZYK, MARTIN RICHARD, TRESSLER, RICHARD ERNEST, TEN EYCK, MONIKA OTT
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	New porous semiconductor dopant carriers are disclosed together with a method for the diffusion doping of semiconductors by the vapour phase transport of an n- or p-type dopant, such as phosphorus, arsenic, antimony, boron, gallium, aluminum, zinc, silicon, tallurium, tin and cadmium to the semiconductor host substrate; wherein the dopant carrier is comprised of a rigid, multiphase dimensionally stable refractory foam, formed through the impregnation, and subsequent thermal destruction of an open-celled organic polymer foam.