METHOD AND APPARATUS FOR LITHOGRAPHIC ROTATE AND REPEAT PROCESSING

In X-ray lithography apparatus, a mask assembly (31,71) permits exposure of selected radial sectors (3, 5, 7, 9) of a semiconductor wafer (1). The mask assembly may comprise a single mask (31) having a single transmissive sector, sectors of the wafer (1) being exposed in turn by rotation of the wafe...

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Bibliographische Detailangaben
Hauptverfasser:	SIDDALL, GRAHAM J, NEUKERMANS, ARMAND P, GARRETTSON, GARRETT A, KRUGER, JAMES B, EATON, STEVEN GLEN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In X-ray lithography apparatus, a mask assembly (31,71) permits exposure of selected radial sectors (3, 5, 7, 9) of a semiconductor wafer (1). The mask assembly may comprise a single mask (31) having a single transmissive sector, sectors of the wafer (1) being exposed in turn by rotation of the wafer. The mask assembly may comprise a single mask (31) having a plurality of transmissive sectors, the wafer (1) being rotated relative to the mask (31) between successive exposures. When the mask assembly comprises a diaphragm having a single transmissive sector, the mask may be divided into a plurality of radial sectors each radial sector having a desired pattern thereon and the diaphragm can be rotated between successive exposures of the wafer.