Semiconductor device comprising a substrate

A semiconductor device which comprises a copper base plate (4) bonded to a C.D.B. substrate (2) is allowed to have a thickness at least over 35 times the extent to which the copper base plate is extended when thermally bonded to said C.D.B. substrate.

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Bibliographische Detailangaben
Hauptverfasser:	TANI, KEIZO, SAITO, YASUMASA
Format:	Patent
Sprache:	eng ; fre ; ger
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A semiconductor device which comprises a copper base plate (4) bonded to a C.D.B. substrate (2) is allowed to have a thickness at least over 35 times the extent to which the copper base plate is extended when thermally bonded to said C.D.B. substrate.