COMPOSITE CIRCUIT OF BIPOLAR TRANSISTORS AND FIELD EFFECT TRANSISTORS

A novel composite circuit comprises a first bipolar transistor (31) with a collector (C) of one conduction type connected to a first potential (V,), an emitter of one conduction type (E) connected to an output, a second bipolartransistor (32) with a collector of one conduction type (C) connected to the output and an emitter of one conduction type (E) connected to a second potential (V2), a field effect transistor of the opposite conduction type (11) with a gate (G) connected to an input, a source connected to a third potential (V3) and a drain (D) connected to the base (B) of the opposite conduction type of the first bipolar transistor, a field effect transistor of one conduction type (21) with a gate (G) connected to the input, a drain (D) connected to the base (B) of the first bipolartransistor, and a source (S) connected to the base (B) of the opposite conduction type of the second bipolar transistor, and a unidirectional element (5) inserted between the output and the drain (D) of the field effect transistor of one conduction type and having the direction of rectification opposite to that of the PN junction formed between the base and emitter of the first bipolar transistor.