PREPARATION OF PHOTODIODES
In a process for making a photodiode comprising a compound semiconductor active layer (13) on a phosphorus-containing substrate (11) a protective dielectric layer (15) is formed on the surface of the active layer prior to any heat treatment, such as diffusion of a p-type region (14), which involves...
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| creator | ZUBER, JOHN RICHARD SINGH, SHOBHA ZYDZIK, GEORGE JOHN VAN UITERT, LEGRAND GERARD CAMLIBEL, IRFAN |
| description | In a process for making a photodiode comprising a compound semiconductor active layer (13) on a phosphorus-containing substrate (11) a protective dielectric layer (15) is formed on the surface of the active layer prior to any heat treatment, such as diffusion of a p-type region (14), which involves a temperature higher than 300 degrees C. The protective layer (15) is formed by a process wherein the temperature of the structure remains below 300 degrees C at least until the protective layer has attained a thickness of 20 nm. A suitable material for the protective layer (15) is silicon nitride (SiNx) deposited by plasma chemical vapour deposition. Photodiodes made this way exhibit reduced dark current and improved noise figures. |
| format | Patent |
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The protective layer (15) is formed by a process wherein the temperature of the structure remains below 300 degrees C at least until the protective layer has attained a thickness of 20 nm. A suitable material for the protective layer (15) is silicon nitride (SiNx) deposited by plasma chemical vapour deposition. 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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | PREPARATION OF PHOTODIODES |
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