PREPARATION OF PHOTODIODES

PREPARATION OF PHOTODIODES

In a process for making a photodiode comprising a compound semiconductor active layer (13) on a phosphorus-containing substrate (11) a protective dielectric layer (15) is formed on the surface of the active layer prior to any heat treatment, such as diffusion of a p-type region (14), which involves...

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Bibliographische Detailangaben
Hauptverfasser: ZUBER, JOHN RICHARD, SINGH, SHOBHA, ZYDZIK, GEORGE JOHN, VAN UITERT, LEGRAND GERARD, CAMLIBEL, IRFAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:In a process for making a photodiode comprising a compound semiconductor active layer (13) on a phosphorus-containing substrate (11) a protective dielectric layer (15) is formed on the surface of the active layer prior to any heat treatment, such as diffusion of a p-type region (14), which involves a temperature higher than 300 degrees C. The protective layer (15) is formed by a process wherein the temperature of the structure remains below 300 degrees C at least until the protective layer has attained a thickness of 20 nm. A suitable material for the protective layer (15) is silicon nitride (SiNx) deposited by plasma chemical vapour deposition. Photodiodes made this way exhibit reduced dark current and improved noise figures.