MAKING HOT PRESSED SILICON NITRIDE BY USE OF LOW DENSITY REACTION BONDED BODY

PCT No. PCT/US82/01461 Sec. 371 Date Oct. 12, 1982 Sec. 102(e) Date Oct. 12, 1982 PCT Filed Oct. 12, 1982.A method of making a silicon nitride comprising object by use of a low density reaction bonded body is disclosed. An uncompacted mixture of silicon powder and a fluxing agent is heated in a nitr...

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Sprache:eng
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Zusammenfassung:PCT No. PCT/US82/01461 Sec. 371 Date Oct. 12, 1982 Sec. 102(e) Date Oct. 12, 1982 PCT Filed Oct. 12, 1982.A method of making a silicon nitride comprising object by use of a low density reaction bonded body is disclosed. An uncompacted mixture of silicon powder and a fluxing agent is heated in a nitrogen atmosphere to react the mixture with the atmosphere to form a body consisting essentially of silicon nitride and having a dimension greater than and a density less than the finished product. The nitrided mixture is then hot pressed to produce a silicon nitride comprising object of desired dimension and density, which material is useful as a cutting tool material for machining metals.