Subsurface Zener diode

A novel zener diode is formed which is suitable for use either as a discrete zener diode, or as one element of an integrated circuit device. In one embodiment, a zener diode is fabricated utilizing an additional introduction of dopants in the zener diode, while forming other devices without this additional dopant introduction. Thus, the zener diode is formed having a large channel width, and therefore low series resistance and high parasitic JFET pinchoff voltage, while the remaining devices are formed having the desired current gains. In another embodiment, the zener diode is fabricated wherein the PN junction of the zener diode located at portions near the surface of the device are specifically fabricated to have higher zener breakdown voltages than the zener breakdown voltage of the zener diode PN junction located beneath the surface of the zener diode, thereby providing improved zener diode characteristics as compared with certain zener diodes of the prior art where the zener breakdown occurs at the surface of the device.